Research on SiC Whisker Prepared by H-PSO

Research on SiC Whisker Prepared by H-PSO

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SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO) as raw material.The effect of surface Planter conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper.The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases.The surface condition of graphite matrix also influences the growth of SiC whisker.

With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other.The formation process of SiC whisker includes two steps:nucleation and growth.SiC whisker nucleates at low temperature and grows at high temperature, Miele which follows the VLS (vapor-liquid-solid) growth mechanism.